The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Apr. 29, 2020
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Lu Zhang, Wuhan, CN;

Zhipeng Wu, Wuhan, CN;

Bo Xu, Wuhan, CN;

Kai Han, Wuhan, CN;

Chuan Yang, Wuhan, CN;

Zi Yin, Wuhan, CN;

Liuqun Xie, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/1157 (2017.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01);
Abstract

Embodiments of structure and methods for forming a memory device are provided. In an example, a memory device includes a substrate, a stack above the substrate, a channel structure, and a source contact structure each extending vertically through the memory stack. The source contact structure includes (i) a plurality of first source contact portions each extending vertically and laterally separated from one another and (ii) a second source contact portion extending vertically over and in contact with the plurality of first source contact portions, the second source contact portion being laterally continuous.


Find Patent Forward Citations

Loading…