Fremont, CA, United States of America

Lisi Xie

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Lam Research Corporation. Active years: 2023.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Lisi Xie - Innovator in Etching Applications

Introduction

Lisi Xie is a notable inventor based in Fremont, CA (US). He has made significant contributions to the field of etching applications, particularly through his innovative patent work. His expertise lies in developing methods that enhance the efficiency and effectiveness of etching processes.

Latest Patents

Lisi Xie holds a patent for "Directional deposition in etch chamber." This patent describes methods for forming a vertical growth mask for use in etching applications. The disclosed embodiments include introducing a tungsten-containing deposition precursor and one or more carrier gases while igniting a plasma. This process allows for selective deposition of tungsten on field regions of positive features of a patterned etch mask, minimizing deposition on sidewalls of the positive features or on an exposed surface of a target layer underlying the patterned etch mask. He has 1 patent to his name.

Career Highlights

Lisi Xie is currently employed at Lam Research Corporation, a leading company in the semiconductor equipment industry. His work at Lam Research has positioned him as a key player in advancing etching technologies. His innovative approaches have contributed to the company's reputation for excellence in the field.

Collaborations

Lisi collaborates with talented individuals such as Zhongkui Tan and Yoko Yamaguchi. Their combined expertise fosters a creative environment that drives innovation in etching applications.

Conclusion

Lisi Xie's contributions to the field of etching applications through his patent work and collaborations highlight his role as an influential inventor. His innovative methods continue to shape the future of semiconductor technology.

Profile summary based on public USPTO records.
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