The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Oct. 29, 2019
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Zhongkui Tan, Fremont, CA (US);

Lisi Xie, Fremont, CA (US);

Yoko Yamaguchi, Union City, CA (US);

Yasushi Ishikawa, Fremont, CA (US);

Patrick Ponath, San Jose, CA (US);

Sung Jin Jung, Pleasanton, CA (US);

Sangjun Park, Fremont, CA (US);

Wonchul Lee, Pleasanton, CA (US);

Jayoung Choi, San Jose, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01J 37/32449 (2013.01); H01J 37/32724 (2013.01); H01L 21/0276 (2013.01); H01L 21/02274 (2013.01);
Abstract

Methods for forming a vertical growth mask for use in etching applications are described herein. Disclosed embodiments include introducing a tungsten-containing deposition precursor and one or more carrier gases while igniting a plasma to deposit tungsten selectively on field regions of positive features of a patterned etch mask without substantial deposition on sidewalls of the positive features or on an exposed surface of a target layer underlying the patterned etch mask.


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