This inventor holds 1 USPTO granted patent. Top assignee: Chinese Academy of Sciences. Active years: 2020.
Company Filing History:
Years Active: 2020
Title: Innovations of Lingyan Shen in HEMT Technology
Introduction
Lingyan Shen is a prominent inventor based in Shanghai, China. She has made significant contributions to the field of microelectronics, particularly in the development of advanced semiconductor devices. Her innovative work focuses on enhancing the performance and efficiency of high-electron-mobility transistors (HEMTs).
Latest Patents
Lingyan Shen holds a patent for a "Fluorinated graphene passivated AlGaN/GaN-based HEMT device and manufacturing method." This invention involves a novel approach where monolayer graphene is transferred to an AlGaN surface and treated with fluoride ions. This process replaces the conventional nitride passivation layer, leading to a high-k material being grown on the graphene. The combined use of high-k material and graphene as a gate dielectric results in a device with a significantly reduced physical thickness and lower additional threshold voltage. The simplicity of the structure and method, along with its remarkable effects, highlights its potential applications in microelectronics and solid-state electronics.
Career Highlights
Lingyan Shen is affiliated with the Chinese Academy of Sciences, where she continues to push the boundaries of semiconductor technology. Her work has garnered attention for its innovative approach and practical applications in the industry.
Collaborations
Lingyan has collaborated with notable colleagues, including Xinhong Cheng and Dongliang Zhang, contributing to the advancement of research in her field.
Conclusion
Lingyan Shen's contributions to HEMT technology exemplify the impact of innovative thinking in microelectronics. Her patent on fluorinated graphene passivation represents a significant step forward in semiconductor device manufacturing.