The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Mar. 04, 2016
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, CN;
Xinhong Cheng, Shanghai, CN;
Lingyan Shen, Shanghai, CN;
Zhongjian Wang, Shanghai, CN;
Duo Cao, Shanghai, CN;
Li Zheng, Shanghai, CN;
Qian Wang, Shanghai, CN;
Dongliang Zhang, Shanghai, CN;
Jingjie Li, Shanghai, CN;
Yuehui Yu, Shanghai, CN;
Abstract
An AlGaN/GaN HEMT based on fluorinated graphene passivation and a manufacturing method thereof. Monolayer graphene () is transferred to an AlGaN () surface, is treated by using fluoride ions and then is insulated to thereby replace a conventional nitride passivation layer. Then, a high-k material () is grown on the graphene (), and the high-k material () and the graphene () are jointly used as a gate dielectric for preparing an AlGaN/GaN metal-insulator-semiconductor (MIS) HEMT. Compared with the traditional passivation structure, the graphene () has the advantages of small physical thickness (sub-nanometer scale) and low additional threshold voltage. The structure and the method are simple, the effect is remarkable and the application prospect in technical fields of microelectronics and solid-state electronics is wide.