This inventor holds 1 USPTO granted patent. Top assignee: Chinese Academy of Sciences. Active years: 2020.
Company Filing History:
Years Active: 2020
Title: Innovations of Jingjie Li in HEMT Technology
Introduction
Jingjie Li is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of microelectronics, particularly in the development of advanced semiconductor devices. His innovative work focuses on enhancing the performance and efficiency of high-electron-mobility transistors (HEMTs).
Latest Patents
Jingjie Li holds a patent for a "Fluorinated graphene passivated AlGaN/GaN-based HEMT device and manufacturing method." This invention involves an AlGaN/GaN HEMT that utilizes fluorinated graphene passivation, replacing the conventional nitride passivation layer. The process includes transferring monolayer graphene to an AlGaN surface, treating it with fluoride ions, and insulating it. This method allows for the growth of a high-k material on the graphene, which, along with the graphene, serves as a gate dielectric for the AlGaN/GaN metal-insulator-semiconductor (MIS) HEMT. Compared to traditional passivation structures, this innovation offers advantages such as a smaller physical thickness at the sub-nanometer scale and a lower additional threshold voltage. The simplicity of the structure and method, along with its remarkable effects, highlights its wide application prospects in microelectronics and solid-state electronics.
Career Highlights
Jingjie Li is affiliated with the Chinese Academy of Sciences, where he continues to advance research in semiconductor technology. His work has garnered attention for its potential to revolutionize the performance of electronic devices.
Collaborations
Jingjie Li has collaborated with notable colleagues, including Li Fei Zheng and Dongliang Zhang, contributing to the advancement of innovative technologies in their field.
Conclusion
Jingjie Li's contributions to HEMT technology through his innovative patent demonstrate his commitment to advancing microelectronics. His work not only enhances device performance but also opens new avenues for research and application in the semiconductor industry.