Shenzhen, China

Lingcong Le

This inventor holds 1 USPTO granted patent and 2 published patent applications and 1 EPO patent. Top assignee: Huawei Technologies Co., Ltd.. Active years: 2026.

USPTO Granted Patents = 1 

 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Lingcong Le: Innovator in Transistor Technology

Introduction

Lingcong Le is a prominent inventor based in Shenzhen, China. He has made significant contributions to the field of electronics, particularly in the development of transistors and electronic components. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Lingcong Le holds a patent for a transistor, which includes a channel, a source, a drain, a gate, and an isolation area disposed on two sides of the channel. The design features a source field plate located on a side of the gate away from the channel, which is electrically connected to the source. This patent outlines a primary field plate that partially overlaps the gate and extends to the drain along the channel. Additionally, a secondary field plate is positioned at the boundary between the channel and the isolation area, enhancing the functionality of the transistor.

Career Highlights

Lingcong Le is currently employed at Huawei Technologies Co., Ltd., a leading global provider of information and communications technology (ICT) infrastructure and smart devices. His role at Huawei allows him to work on cutting-edge technology and contribute to the company's innovative projects.

Collaborations

Throughout his career, Lingcong Le has collaborated with notable colleagues, including Shujun Dai and Xiaogang Li. These partnerships have fostered a creative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Lingcong Le's contributions to transistor technology exemplify his dedication to innovation in the electronics field. His patent reflects a significant advancement that could influence future developments in electronic components.

Profile summary based on public USPTO records.
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