The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jul. 28, 2023
Huawei Technologies Co., Ltd., Shenzhen, CN;
Lingcong Le, Shenzhen, CN;
Shujun Dai, Suzhou, CN;
Xiaogang Li, Suzhou, CN;
Huilan Hu, Suzhou, CN;
Hao Jiang, Shenzhen, CN;
Chang Zeng, Suzhou, CN;
HUAWEI TECHNOLOGIES CO., LTD., Shenzhen, CN;
Abstract
This application provides a transistor, including a channel, a source, a drain, a gate, an isolation area disposed on two sides of the channel, and a source field plate located on a side of the gate away from the channel. The source field plate is electrically connected to the source. The source field plate includes a primary field plate and a secondary field plate. The primary field plate partially overlaps the gate. A side part of the primary field plate crosses the gate and extends to the drain along the channel. A first end of the primary field plate crosses the channel along a direction perpendicular to the channel and enters the isolation area. The secondary field plate is located at a boundary between the channel and the isolation area, and extends from the primary field plate to a direction of the source along the channel.