San Jose, CA, United States of America

Ling Q Qian

This inventor holds 6 USPTO granted patents. Top assignees: Vlsi Technology, Inc., Lsi Technology, Inc.. Active years: 1998-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ling Q Qian. Retrieved from https://idiyas.com/inventor/ling-q-qian

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 3

Forward Citations = 98(Granted Patents)


Company Filing History:


Years Active: 1998-2000

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6 patents (USPTO):Explore Patents

Title: Innovations of Ling Q Qian in Semiconductor Technology

Introduction

Ling Q Qian is a prominent inventor based in San Jose, California, known for his significant contributions to semiconductor technology. With a total of six patents to his name, Qian has developed innovative methods that enhance the performance and efficiency of semiconductor devices.

Latest Patents

One of Qian's latest patents is titled "Methods for making semiconductor devices having air dielectric." This invention outlines a method for creating an integrated circuit interconnect structure that utilizes air as the effective dielectric between metallization layers. The process involves several steps, including providing a sacrificial material layer, forming pillar holes, and constructing a metallization layer. The final structure features a bottom metallization layer, a top metallization layer, and pillars that provide mechanical support.

Another notable patent is the "Process for manufacturing arrays of field emission tips." This method is designed for creating arrays of field emission tips suitable for field emission displays (FEDs). The process begins with the deposition of a conductive cathode layer, followed by the patterning of this layer to define cathode structures. The method includes the use of high-density plasma chemical vapor deposition (HDPCVD) to form sharp field emission tips, which are essential for the functionality of FEDs.

Career Highlights

Throughout his career, Ling Q Qian has worked with several notable companies, including VLSI Technology, Inc. and LSI Technology, Inc. His work in these organizations has contributed to advancements in semiconductor technology and has positioned him as a key figure in the field.

Collaborations

Qian has collaborated with various professionals, including Subhas Bothra and Subras Bothra, who have contributed to his research and development efforts.

Conclusion

Ling Q Qian's innovative work in semiconductor technology has led to the development of several important patents that enhance the capabilities of electronic devices. His contributions continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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