The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2000
Filed:
Mar. 18, 1997
Subras Bothra, San Jose, CA (US);
Ling Q Qian, San Jose, CA (US);
VLSI Technology, Inc., San Jose, CA (US);
Abstract
A method for manufacturing arrays of field emission tips, suitable for use in field emission displays (FEDs), begins by depositing a conductive cathode layer over a substrate and then patterning the conductive cathode layer to define a set of cathode structures on which the array of tips are to be formed. A layer of a insulator material is deposited and then a layer of lift-off material is deposited. The lift-off material is capable of being selectively etched with respect to the insulator layer. The insulator material layer and lift-off material layer are patterned to define a set of apertures in which field emission tips are to be formed. Next, tip material is deposited using an unbiased high density plasma chemical vapor deposition (HDPCVD) process to form sharp field emission tips in the apertures. The HDPCVD process also forms a sacrificial layer of islands of tip material on top of the patterned layer of lift-off material. After the formation of the field emission tips, the patterned layer of lift-off material is removed using a wet chemical etchant that also removes sacrificial layer of tip material. A layer of fill material is deposited and planarized so as to fill the apertures in which the tips were formed. A gate layer is then deposited and patterned to form gate structures. A subsequent wet etch removes the fill material surrounding the emitter tips.