Linda S Brush

Title: Innovations by Linda S Brush

Introduction

Linda S Brush is a notable inventor based in Mountain Top, PA (US). She has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. Her work focuses on enhancing the performance and efficiency of power MOS devices.

Latest Patents

One of her latest patents is for a "Power MOS device with buried gate." This innovative MOS power device features a substrate with an upper layer and an underlying drain region. It includes a well region of a first conductance type and a plurality of spaced apart buried gates, each comprising a trench that extends through the well region into the drain region. The design aims to avoid the loss of channel width while reducing channel resistance without sacrificing device ruggedness and dynamic characteristics.

Another significant patent is for a "Power trench transistor device source region formation using silicon spacer." This power trench MOS-gated transistor is constructed with a buried gate to source dielectric inside a gate trench region. The process simplifies the fabrication of power trench gated devices and increases contact surface area without increasing device size.

Career Highlights

Linda S Brush is currently employed at Fairchild Semiconductor Corporation, where she continues to innovate in the semiconductor industry. Her work has been instrumental in developing advanced technologies that improve device performance.

Collaborations

Throughout her career, Linda has collaborated with talented individuals such as Jun Zeng and Christopher Boguslaw Kocon. These collaborations have contributed to her success and the advancement of her projects.

Conclusion

Linda S Brush is a pioneering inventor whose work in semiconductor technology has led to significant advancements in power MOS devices. Her contributions continue to shape the future of the industry.