Lin Huang Chang

Title: Lin Huang Chang: Innovator in Thin Film Capacitors

Introduction

Lin Huang Chang is a notable inventor based in Keelung, Taiwan. He has made significant contributions to the field of thin film capacitors, particularly through his innovative methods of manufacturing ferroelectric materials. With a total of 2 patents to his name, Chang's work has implications for various electronic applications.

Latest Patents

Chang's latest patents focus on the development of thin film capacitors. One of his patents details a method for depositing ferroelectric PbZr T O (PZT) thin films on platinum-coated silicon substrates using RF magnetron sputtering. This method aims to achieve desirable stoichiometric PZT and enhance dielectric properties by utilizing a PZT target with a Pb/(Zr+Ti) ratio of 1.2. The deposition occurs at 350°C, followed by thermal treatment at 620°C for 30 minutes. Additionally, the structural and electrical properties of the PZT layer are improved through a novel multi-layer structure that combines the PZT thin film with nanolayers of BaTiO3. This innovative approach results in reduced leakage current density while maintaining high relative effective dielectric constants.

Career Highlights

Lin Huang Chang is affiliated with the State University of New York, where he continues to advance research in the field of materials science. His work has garnered attention for its practical applications in electronics and energy storage.

Collaborations

Chang has collaborated with Wayne A Anderson, contributing to the advancement of research in thin film technologies.

Conclusion

Lin Huang Chang's contributions to the field of thin film capacitors demonstrate his innovative spirit and commitment to advancing technology. His patents reflect a deep understanding of material properties and manufacturing techniques, paving the way for future developments in electronics.