The State University of New York

Lin Huang Chang

Wayne A Anderson

Ferroelectric PbZr T O (PZT) thin films are deposited on Pt coated Si substrates by using RF magnetron sputtering. A method for obtaining desirable stoichiometric PZT, the desired ferroelectric perovskite phase, and better dielectric properties using a PZT target with Pb/(Zr&plus;Ti) ratio of 1.2 and depositing at 350&deg; C., followed by thermal treatment at 620&deg; C. for 30 min is disclosed. The structural and electrical properties of the PZT layer were further improved by a method of fabricating a novel multi-layer structure which combined the PZT thin film with nanolayers of BaTiO . The method and device of the present invention provided reduced leakage current density while maintaining high relative effective dielectric constants.

Thin film capacitor and method of manufacture

Ferroelectric PbZr.sub.x T.sub.1-x O.sub.3 (PZT) thin films are deposited on Pt coated Si substrates by using RF magnetron sputtering. A method for obtaining desirable stoichiometric PZT, the desired ferroelectric perovskite phase, and better dielectric properties using a PZT target with Pb/(Zr+Ti) ratio of 1.2 and depositing at 350.degree. C., followed by thermal treatment at 620.degree. C. for 30 min is disclosed. The structural and electrical properties of the PZT layer were further improved by a method of fabricating a novel multi-layer structure which combined the PZT thin film with nanolayers of BaTiO.sub.3. The method and device of the present invention provided reduced leakage current density while maintaining high relative effective dielectric constants.

Growing community of inventors

Keelung, Taiwan

Lin Huang Chang