Portland, OR, United States of America

Lin Hu

USPTO Granted Patents = 1 

Average Co-Inventor Count = 15.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: The Innovative Work of Lin Hu in Integrated Circuit Structures

Introduction: Lin Hu is an accomplished inventor based in Portland, Oregon, known for his contributions to the field of integrated circuit technology. With his innovative approach, he has secured a patent that provides significant advancements in the design and fabrication of circuit structures.

Latest Patents: Lin Hu holds a notable patent titled "Substrate-free integrated circuit structures." This patent describes substrate-less integrated circuit structures and methods of fabricating them. Specifically, the invention includes a fin and a series of gate structures positioned over the fin, along with alternating P-type and N-type epitaxial structures situated between the gate structures. This groundbreaking technology is poised to improve the performance and efficiency of integrated circuits.

Career Highlights: As a key member of Intel Corporation, Lin Hu collaborates with a team of dedicated professionals to push the boundaries of technology in the semiconductor industry. His work has not only enhanced the capabilities of integrated circuits but also aligned with Intel’s mission to develop cutting-edge technologies that shape the future.

Collaborations: Lin Hu has worked closely with notable colleagues, including Biswajeet Guha. Their collaborative efforts have fostered a dynamic environment for innovation, facilitating the development of advanced technologies that advance the field of electronics.

Conclusion: Lin Hu's dedication to innovation and his impactful patent on substrate-free integrated circuit structures exemplify the spirit of technological advancement at Intel Corporation. Through his expertise and collaborations, he continues to contribute to the evolution of integrated circuit technology, paving the way for future innovations in this critical field.

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