Liming Wang

Title: Liming Wang: Innovator in CMOS Technology

Introduction

Liming Wang is a prominent inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of CMOS structures. His innovative work has led to advancements that enhance the performance and reliability of integrated circuits.

Latest Patents

Liming Wang holds a patent for a CMOS structure and fabrication methods of FinFET CMOS, FD CMOS, and GAA CMOS. This patent describes a CMOS structure that includes both nMOS and pMOS components. The nMOS features a first channel region and a first gate electrode formed on a semiconductor substrate, while the pMOS includes a second channel region and a second gate electrode. Notably, both channel regions are made from semiconductor materials with the same conductivity type, and the gate electrodes are formed from conductive materials with the same work function. This innovative structure reduces the processing steps required for fabricating CMOS, thereby simplifying the process and lowering production costs.

Career Highlights

Liming Wang is affiliated with Xidian University, where he continues to engage in research and development in semiconductor technologies. His work has been instrumental in advancing the field and has garnered attention for its practical applications in improving integrated circuit performance.

Collaborations

Liming Wang has collaborated with notable colleagues, including Huiyong Hu and Bin Shu. Their joint efforts have contributed to the advancement of semiconductor technologies and the development of innovative solutions in the field.

Conclusion

Liming Wang's contributions to CMOS technology exemplify the impact of innovative thinking in the semiconductor industry. His patent and ongoing research at Xidian University highlight the importance of advancements in this critical area of technology.