Lihsin Chang

Title: **Lihsin Chang: Innovator in Flash Memory Technology**

Introduction

Lihsin Chang, an accomplished inventor based in Hsinchu County, Taiwan, holds a distinguished patent in the field of memory technology. With his innovative approach, he has made significant contributions to the advancement of flash memory arrays, showcasing the potential for enhanced data storage solutions.

Latest Patents

Lihsin Chang's notable patent is titled "Four gate, split-gate flash memory array with byte erase operation." This invention details a memory cell array where memory cells are systematically arranged in rows and columns. The patent introduces a structure featuring first and second sub source lines, which connect the source regions of different rows, allowing for improved operational efficiency. Moreover, it incorporates first and second erase gate lines and select transistors that facilitate byte-level erasing of data, underscoring the patent's impact on memory technology.

Career Highlights

Lihsin Chang is affiliated with Silicon Storage Technology, Inc., where he has been instrumental in driving innovation in flash memory solutions. His work focuses on enhancing data storage methods and improving the reliability of memory devices, which is critical in today's technology-driven world.

Collaborations

Throughout his career at Silicon Storage Technology, Inc., Lihsin has collaborated with talented engineers such as Hsuan Liang and Man Tang Wu. These collaborations have played a vital role in advancing their collective knowledge and driving the progress of memory technology innovations.

Conclusion

Lihsin Chang’s contributions to the field of flash memory technology through his patent demonstrate his commitment to innovation and excellence. His work not only enhances memory technology but also paves the way for future advancements in data storage solutions. As the industry continues to evolve, Lihsin's contributions will certainly remain impactful.