Lifu Chen

Title: Lifu Chen: Innovator in Advanced Material Deposition

Introduction

Lifu Chen is a prominent inventor based in Helsinki, Finland. He has made significant contributions to the field of material science, particularly in the development of methods for forming advanced layers used in various electronic devices. With a total of 3 patents to his name, Chen's work is at the forefront of innovation in semiconductor technology.

Latest Patents

Lifu Chen's latest patents include groundbreaking methods and systems for forming layers comprising aluminum, titanium, and carbon. These patents disclose techniques for depositing layers onto the surface of a substrate through a cyclical deposition process. The exemplary structures that may incorporate these layers include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors. Another notable patent focuses on methods for forming structures for threshold voltage control. This involves depositing rare earth metal carbide containing layers on a substrate surface, utilizing a cyclical deposition process such as atomic layer deposition.

Career Highlights

Lifu Chen is currently associated with Asm IP Holding B.V., where he continues to push the boundaries of material deposition technologies. His innovative approaches have garnered attention in the industry, contributing to advancements in electronic device performance and efficiency.

Collaborations

Lifu Chen has collaborated with notable professionals in his field, including Charles Dezelah and Petro Deminskyi. These collaborations have further enriched his research and development efforts, leading to impactful innovations.

Conclusion

Lifu Chen's contributions to the field of material science and semiconductor technology are noteworthy. His patents reflect a commitment to advancing the capabilities of electronic devices through innovative deposition methods.