Asm IP Holding B.v.

Lifu Chen

Charles Dezelah

Petro Deminskyi

Qi Xie

Giuseppe Alessio Verni

Ren-Jie Chang

Maart Van Druenen

Eric James Shero

Petri Raisanen

Disclosed are methods and systems for depositing layers comprising a titanium, aluminum, and carbon. The layers are formed onto a surface of a substrate. The deposition process comprises a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Methods and systems for forming a layer comprising aluminum, titanium, and carbon

Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

Method of forming structures for threshold voltage control

Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Methods and systems for forming a layer comprising a transitional metal and a group 13 element

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Lifu Chen