Garland, TX, United States of America

Liem T Tran

This inventor holds 6 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1988-1991.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Liem T Tran. Retrieved from https://idiyas.com/inventor/liem-t-tran-6mspvdi1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 5

Forward Citations = 58(Granted Patents)


Location History:

  • Garland, TX (US) (1988 - 1991)
  • Dallas, TX (US) (1989 - 1991)

Company Filing History:


Years Active: 1988-1991

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6 patents (USPTO):Explore Patents

Title: Innovations of Liem T Tran in Gallium Arsenide Technology

Introduction

Liem T Tran is a notable inventor based in Garland, TX (US), recognized for his contributions to the field of semiconductor technology. He holds a total of 6 patents, showcasing his innovative approach to enhancing the performance of gallium arsenide devices.

Latest Patents

Tran's latest patents include a groundbreaking invention titled "Junction field effect transistor with bipolar device and method." This patent describes the fabrication of vertical AlGaAs heterojunction bipolar transistors and GaAs junction field effect transistors on a single gallium arsenide substrate, forming an integrated circuit structure. The integration is achieved through a novel method that allows for the simultaneous formation of HI2L transistors and JFET structures without additional processing steps. An ion implant technique is utilized to create various regions within the substrate, optimizing speed and power dissipation in large-scale integrated circuits.

Another significant patent is the "Method for making a high speed gallium arsenide transistor." This invention focuses on vertical buried emitter heterojunction bipolar transistors with reduced emitter to base junction area and collector dimensions. By etching a trench in the gallium arsenide structure, Tran is able to scale critical dimensions, thereby improving device operating speed and enabling higher levels of integration.

Career Highlights

Liem T Tran is currently employed at Texas Instruments Corporation, where he continues to push the boundaries of semiconductor technology. His work has significantly impacted the development of high-speed transistors, making them more efficient and effective for various applications.

Collaborations

Tran has collaborated with esteemed colleagues such as Donald L Plumton and Han-Tzong Yuan, contributing to the advancement of innovative technologies in the semiconductor industry.

Conclusion

Liem T Tran's innovative work in gallium arsenide technology has led to significant advancements in the field of semiconductor devices. His patents reflect a commitment to enhancing performance and efficiency, making him a key figure in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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