The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 1988
Filed:
Apr. 20, 1987
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A two step rapid thermal anneal (RTA) has been studied for activating Be implanted GaAs, where a short duration high temperature step is used to electrically activate the Be followed by a longer low temperature anneal for lattice re-growth. PN diodes show a substantial reduction in reverse diode leakage current after the lower temperature second step anneal, when compared to a single step RTA or to furnace annealing (FA). For low energy Be implants, no difference in electrical activation between the single step and the two step anneal is observed. Raman studies demonstrate that residual substrate impurities and high Be concentrations inhibit restoration of single crystal lattice characteristics after RTA. Lattice quality is also shown not to limit diode characteristics in the RTA material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile