This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Winbond Electronics Corporation. Active years: 2022.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2022
Title: Liann-Chern Liou: Innovator in Memory Structure Technology
Introduction
Liann-Chern Liou is a prominent inventor based in Hsinchu, Taiwan. She has made significant contributions to the field of memory structure technology. With a focus on innovative manufacturing methods, her work has the potential to impact various applications in electronics.
Latest Patents
Liann-Chern Liou holds a patent for a "Memory structure and method of manufacturing the same." This invention includes a substrate, a tunnel dielectric layer, and a floating gate. The design features a source region and a drain region on opposite sides of the floating gate. Additionally, it incorporates an inter-gate dielectric layer and a control gate, enhancing the functionality of the memory structure.
Career Highlights
Liann-Chern Liou is currently employed at Winbond Electronics Corporation, where she continues to develop her innovative ideas. Her work has led to advancements in memory technology, showcasing her expertise and dedication to the field.
Collaborations
Liann-Chern has collaborated with notable colleagues, including Che-Jui Hsu and Chang-Ming Chiang. These partnerships have fostered a creative environment that encourages the exchange of ideas and innovation.
Conclusion
Liann-Chern Liou is a trailblazer in memory structure technology, with a patent that exemplifies her innovative spirit. Her contributions to the field are noteworthy, and her collaborations further enhance her impact on the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile