This inventor holds 1 USPTO granted patent. Top assignee: United Semiconductor (Xiamen) Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Innovations by Liangfeng Zhang in Semiconductor Fabrication
Introduction
Liangfeng Zhang is a notable inventor based in Shamen City, China. He has made significant contributions to the field of semiconductor technology. His innovative methods have the potential to enhance the efficiency and performance of semiconductor devices.
Latest Patents
Liangfeng Zhang holds a patent for a "Method for fabricating semiconductor device." This method includes several steps, such as forming a gate structure on a substrate and implanting a fluorine-containing dopant into the substrate. The process also involves creating lightly doped drain regions on either side of the gate structure. A thermal treatment process is performed, allowing some fluorine atoms to diffuse onto the substrate's surface, followed by their removal.
Career Highlights
Liangfeng Zhang is currently associated with United Semiconductor (Xiamen) Co., Ltd. His work at this company focuses on advancing semiconductor fabrication techniques. His expertise in this area has positioned him as a valuable asset in the industry.
Collaborations
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Conclusion
Liangfeng Zhang's contributions to semiconductor fabrication highlight his innovative spirit and technical expertise. His patent reflects a significant advancement in the field, showcasing his commitment to improving technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile