The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Nov. 16, 2023
Applicant:
United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;
Inventors:
Linshan Yuan, Shamen City, CN;
Guang Yang, Shamen City, CN;
Liangfeng Zhang, Shamen City, CN;
Jinjian Ouyang, Xiamen, CN;
Chin-Chun Huang, Hsinchu County, TW;
Wen Yi Tan, Xiamen, CN;
Assignee:
United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 30/20 (2026.01); H10D 30/01 (2025.01); H10D 62/00 (2026.01); H10D 64/01 (2025.01); H10P 76/40 (2026.01);
U.S. Cl.
CPC ...
H10P 30/20 (2026.01); H10D 30/0227 (2025.01); H10D 62/021 (2025.01); H10P 76/405 (2026.01); H10D 64/021 (2025.01);
Abstract
A method for fabricating a semiconductor device includes steps as follows. A gate structure is formed on a substrate. A fluorine-containing dopant is implanted into the substrate to form two lightly doped drain regions at two sides of the gate structure. A thermal treatment process is performed, in which a part of fluorine atoms of the fluorine-containing dopant diffuse onto a surface of the substrate. The part of fluorine atoms are removed.