St. Joris Weert, Belgium

Liang Yan

This inventor holds 2 USPTO granted patents. Top assignee: Nxp B.v.. Active years: 2016-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Liang Yan. Retrieved from https://idiyas.com/inventor/liang-yan-9hjko1aq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2016-2017

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2 patents (USPTO):Explore Patents

Title: The Innovations of Liang Yan

Introduction

Liang Yan is a notable inventor based in St. Joris Weert, Belgium. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to improving device performance and safety.

Latest Patents

Liang Yan's latest patents include a "Semiconductor device with an integrated heat sink array" and a "Semiconductor device with heat sinks." Both inventions introduce an integrated heat sink array in SOI power devices that have multiple unit cells. These innovations aim to reduce temperature rise and achieve more uniform temperature peaks across the device area. By doing so, they help avoid hot spots that are prone to breakdown, thereby improving the safe operating area of the device. Additionally, the array occupies less area of the device, resulting in lower Rdson.

Career Highlights

Liang Yan is currently employed at NXP B.V., where he continues to develop cutting-edge semiconductor technologies. His work has been instrumental in advancing the efficiency and reliability of power devices.

Collaborations

Some of his coworkers include Roel Daamen and Anco Heringa, who collaborate with him on various projects within the company.

Conclusion

Liang Yan's contributions to semiconductor technology through his innovative patents demonstrate his commitment to enhancing device performance and safety. His work at NXP B.V. continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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