Liang-Hsuan Peng

Title: Innovations of Liang-Hsuan Peng in Semiconductor Technology.

Introduction

Liang-Hsuan Peng is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on developing advanced semiconductor device structures and methods for their formation.

Latest Patents

Liang-Hsuan Peng holds a patent for a semiconductor device structure and methods of forming the same. This patent describes a semiconductor device structure that includes an interconnect structure disposed over a substrate. It features a first conductive element within the interconnect structure, a dielectric layer on top of the interconnect structure, and a second conductive feature with both a top and bottom portion. The top portion is situated above the dielectric layer, while the bottom portion extends through it. Additionally, the structure incorporates an adhesion layer that covers both the dielectric layer and the second conductive feature, with specific thickness and width characteristics.

Career Highlights

Liang-Hsuan Peng is currently associated with Taiwan Semiconductor Manufacturing Company Ltd. His role in this leading semiconductor manufacturing firm allows him to contribute to cutting-edge technology and innovation in the industry.

Collaborations

Due to space constraints, the collaborations section will be omitted.

Conclusion

Liang-Hsuan Peng's innovative work in semiconductor technology exemplifies the advancements being made in this critical field. His patent reflects a commitment to enhancing semiconductor device structures, which are essential for modern electronics.