Lian Hoon Ko

Title: Lian Hoon Ko: Innovator in Semiconductor Fabrication

Introduction

Lian Hoon Ko is a notable inventor based in Singapore, recognized for his contributions to the field of semiconductor fabrication. His innovative work focuses on methods that enhance the performance of device substrates and integrated circuits.

Latest Patents

Lian Hoon Ko holds a patent titled "Methods for fabricating device substrates and integrated circuits." This patent describes techniques for creating device substrates with rounded trench corners in medium voltage (MV) and high voltage (HV) regions. The methods aim to minimize interference with the performance of MV or HV devices that are adjacent to these substrates. The process involves thermally oxidizing a trench-forming area in an MV or HV region on a semiconductor substrate, resulting in a silicon oxide layer with narrowed birds beak edges that create rounded trench shoulders. An isolation trench is then formed through the silicon oxide layer, removing a portion of the silicon oxide layer while leaving the birds beak edges intact. After this, an oxide layer is formed to line the trench and shoulders, creating rounded trench corners in the MV or HV region. Notably, trenches with rounded corners can be formed simultaneously with trenches in low voltage regions that do not require rounded corners.

Career Highlights

Lian Hoon Ko is currently employed at Globalfoundries Singapore Pte. Ltd., where he continues to innovate in semiconductor technology. His work has significantly impacted the efficiency and performance of integrated circuits.

Collaborations

Lian Hoon Ko collaborates with Yung Fu Chong, a talented woman in the field, contributing to advancements in semiconductor fabrication.

Conclusion

Lian Hoon Ko's innovative methods in semiconductor fabrication demonstrate his commitment to enhancing technology in the industry. His contributions are vital for the development of more efficient integrated circuits.