This inventor holds 1 USPTO granted patent. Top assignee: Vanguard International Semiconductor Corporation. Active years: 2000.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2000
Title: Innovations of Lian-Fa Hung
Introduction
Lian-Fa Hung is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on methods to enhance the reliability of interlayer dielectrics in silicon substrates.
Latest Patents
Lian-Fa Hung holds a patent for a method involving a high compressive stress oxide. This invention aims to eliminate the cracking of boron phospho-silicate glass (BPSG) interlayer dielectrics. The patent addresses the issues of cracks in subsequently deposited silicon nitride (SiN) layers and other high tensile stress layers. His patent is crucial for improving the durability of semiconductor devices.
Career Highlights
Lian-Fa Hung is currently employed at Vanguard International Semiconductor Corporation. His work at this company has allowed him to apply his innovative ideas in a practical setting. He has been instrumental in developing solutions that enhance the performance and reliability of semiconductor products.
Collaborations
Lian-Fa Hung has collaborated with notable colleagues such as Keng-Chu Lin and Kuang-Chao Chen. Their teamwork has contributed to advancements in semiconductor technology and innovation.
Conclusion
Lian-Fa Hung's contributions to the field of semiconductor technology are noteworthy. His innovative patent and collaborative efforts highlight his commitment to advancing the industry. His work continues to influence the development of reliable semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile