The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
Oct. 20, 1999
Applicant:
Inventors:
Keng-Chu Lin, Ping-Tung, TW;
Kuang-Chao Chen, Chutung, TW;
Rong-Wu Chien, Hsinchu, TW;
Lian-Fa Hung, Tainan, TW;
Pang-Yen Tsai, Kaohsiung, TW;
Ching-Chang Chang, Tainan, TW;
Assignee:
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438624 ;
Abstract
The present invention is a method of capping with a high compressive stress oxide, a boron phospho-silicate glass (BPSG) interlayer dielectric (ILD) gapfill that has been deposited on a topographic silicon substrate, in order to eliminate the formation of cracks in subsequently deposited silicon nitride (SiN) layers, other subsequently deposited high tensile stress layers and cracks that result from other post-BPSG deposition high temperature processes.