Hefei, China

Li Zhu

This inventor holds 1 USPTO granted patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Li Zhu. Retrieved from https://idiyas.com/inventor/li-zhu-8lurp9do

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Li Zhu

Introduction

Li Zhu is a prominent inventor based in Hefei, China. He has made significant strides in the field of memory devices, focusing on enhancing storage speed and efficiency. His work is pivotal in addressing the technical challenges faced by modern memory technologies.

Latest Patents

Li Zhu holds a patent for a "Method for manufacturing memory and memory." This innovative method provides a solution to the issues of relatively low storage speed and storage efficiency. The manufacturing process involves several key steps, including the provision of a substrate with capacitor contact pads, the formation of recesses and conductive pillars, and the assembly of capacitors that are electrically connected to the contact pads.

Career Highlights

Li Zhu is currently employed at Changxin Memory Technologies, Inc., where he continues to develop cutting-edge memory solutions. His expertise in memory device technology has positioned him as a valuable asset in the industry.

Collaborations

Li Zhu collaborates with notable colleagues, including Weiping Bai and Zhan Ying, who contribute to the innovative projects at Changxin Memory Technologies, Inc. Their combined efforts enhance the research and development of advanced memory technologies.

Conclusion

Li Zhu's contributions to the field of memory devices exemplify the importance of innovation in technology. His patent and ongoing work at Changxin Memory Technologies, Inc. highlight his commitment to improving storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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