Singapore, Singapore

Li Xia


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Li Xia: Innovating Semiconductor Technology in Singapore

Introduction

Li Xia is a prominent inventor based in Singapore, known for her innovative contributions to the semiconductor industry. With a focus on enhancing oxide uniformity and control in dual gate structures, her work has significant implications for the efficiency and performance of electronic devices.

Latest Patents

Li Xia holds a patent titled "Method for forming damascene dual gate for improved oxide uniformity and control." This innovative method involves a sophisticated process of growing layers of gate oxide or gate base materials of varying thicknesses, specifically for dual gate structures. The patent outlines a step-by-step procedure that begins with a semiconductor surface where STI regions are formed. It details how a layer of gate base material is grown and subsequently masked and etched to create a precise thickness. Through this method, gate electrode structures are established with varying thicknesses of gate base materials, enhancing their functionality in semiconductor devices.

Career Highlights

Li Xia is currently employed by Chartered Semiconductor Manufacturing Ltd, a leading corporation in the semiconductor industry. Throughout her career, she has focused on developing cutting-edge methodologies that push the boundaries of current technologies. Her commitment to innovation has positioned her as a key player in semiconductor research and development.

Collaborations

In her professional journey, Li has collaborated with notable colleagues, including Gao Feng and Yong Meng Lee. These partnerships have contributed to a vibrant exchange of ideas, fostering an environment where groundbreaking advancements in technology can thrive.

Conclusion

Li Xia's contributions to the field of semiconductor technology, particularly through her patent on dual gate methods, underscore her role as an innovative inventor. Her work not only enhances the performance of semiconductor devices but also reflects her dedication to pushing the limits of what is possible in the industry. As a key figure at Chartered Semiconductor Manufacturing Ltd, Li continues to inspire future generations of inventors.

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