Li-Ping Huang

Title: Li-Ping Huang and Memory Device Innovation.

Introduction

Li-Ping Huang is an inventor associated with Singapore and Invention and Collaboration Laboratory Pte. Ltd. Her work includes a patent for a memory device and its manufacturing method.

Latest Patents

Huang’s listed patent, “Memory Device and Manufacturing Method Thereof,” describes a memory device with an access transistor formed in the active region of a semiconductor substrate and a storage capacitor positioned above it. The transistor uses a recessed gate structure, with source/drain contacts on opposite sides of the gate.

The storage capacitor features a composite bottom electrode made of alternating conductive layers. Tunnels extend laterally through the second conductive layers, while a capacitor dielectric covers the electrode’s inner and outer surfaces. A top electrode contacts the composite bottom electrode through the dielectric. Huang is associated with 1 patent.

Career Highlights

Huang’s patent work focuses on semiconductor memory architecture and device fabrication. The described design combines a recessed-gate access transistor with a layered capacitor electrode.

Collaborations

Huang’s listed coworkers include Chao-Chun Lu and Wen-Hsien Tu. The patent information connects her work with Invention and Collaboration Laboratory Pte. Ltd.

Conclusion

Li-Ping Huang’s patent reflects work on memory-device structure and manufacturing, particularly the integration of an access transistor with a composite-electrode storage capacitor.