This inventor holds 2 USPTO granted patents. Top assignees: Conexant Systems, Inc., Newport Fab, LLC. Active years: 2003.
Company Filing History:
Years Active: 2003
Title: Innovations of Inventor Li-Ming Hwang
Introduction
Li-Ming Hwang is a notable inventor based in Irvine, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of MOSFET devices. With a total of 2 patents, Hwang's work focuses on reducing noise levels in electronic components, which is crucial for enhancing device performance.
Latest Patents
Hwang's latest patents include innovative techniques for reducing 1/f noise in MOSFETs. His first patent describes an improved gate structure for a MOSFET device that exhibits a reduced level of 1/f noise, also known as "flicker noise." This invention maintains control over boron penetration into the substrate of the MOSFET device. The gate structure includes a gate electrode and a gate oxide layer, where nitrogen is selectively implanted into the gate oxide/device substrate interface prior to the oxidation of the gate oxide layer. This selective implantation allows for the benefits of controlling boron penetration while simultaneously reducing 1/f noise.
His second patent also focuses on a technique for reducing 1/f noise in MOSFETs, reiterating the importance of the gate structure and the selective implantation of nitrogen. This dual approach highlights Hwang's commitment to advancing semiconductor technology and improving electronic device reliability.
Career Highlights
Throughout his career, Li-Ming Hwang has worked with several prominent companies, including Newport Fab, LLC and Conexant Systems, Inc. His experience in these organizations has allowed him to refine his expertise in semiconductor fabrication and device engineering.
Collaborations
Hwang has collaborated with notable professionals in the field, including Sandeep D'Souza and Aniruddha B Joshi. These collaborations have contributed to the advancement of his research and the successful development of his patented technologies.
Conclusion
Li-Ming Hwang's innovative work in reducing noise in MOSFET devices showcases his significant contributions to the field of semiconductor technology. His patents reflect a deep understanding of electronic components and a commitment to enhancing their performance.