Conexant Systems, Inc.

Newport Fab, LLC

Li-Ming Hwang

Aniruddha B Joshi

Suryanarayana Shivakumar Bhattacharya

Sandeep D'Souza

An improved gate structure for a MOSFET device exhibits a reduced level of 1/f noise or &ldquo;flicker noise&rdquo;, while maintaining the control of boron penetration into the substrate of the MOSFET device. The gate structure for the MOSFET device includes a gate electrode and a gate oxide layer wherein nitrogen is selectively implanted into the gate oxide/device substrate interface prior to oxidation of the gate oxide layer. The nitrogen is selectively implanted so that the nitrogen is implanted into thin gate oxide regions and masked from thick gate oxide regions so that the benefits of controlling the boron penetration are realized while the 1/f noise is reduced due to the selective implantation of the nitrogen.

Growing community of inventors

Irvine, CA, United States of America

Li-Ming Hwang