Tempe, AZ, United States of America

Li Huang


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2016-2017

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2 patents (USPTO):Explore Patents

Title: Innovations of Inventor Li Huang

Introduction

Li Huang is a notable inventor based in Tempe, AZ (US). He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, his work focuses on advanced semiconductor structures and light-emitting devices.

Latest Patents

Li Huang's latest patents include innovative semiconductor structures that feature active regions composed of indium gallium nitride (InGaN). These structures consist of multiple layers of InGaN, with at least one well layer and one barrier layer. The well layer's composition may vary, with the value of w being between 0.10 and 0.40, while the barrier layer's value of b ranges from 0.01 to 0.10. The methods for forming these semiconductor structures involve growing InGaN layers to create active regions for light-emitting devices, such as LEDs.

Career Highlights

Li Huang is currently employed at Soitec, a company recognized for its advancements in semiconductor materials. His work has contributed to the development of luminary devices that utilize his patented technologies.

Collaborations

Li has collaborated with notable colleagues, including Jean-Philippe Debray and Chantal Arena, who is a prominent woman in the field.

Conclusion

Li Huang's innovative work in semiconductor technology and his contributions to light-emitting devices highlight his importance as an inventor. His patents reflect a commitment to advancing technology in this critical area.

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