The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Mar. 14, 2014
Soitec, Crolles, FR;
Jean-Philippe Debray, Mesa, AZ (US);
Chantal Arena, Mesa, AZ (US);
Heather McFavilen, Tempe, AZ (US);
Ding Ding, Chandler, AZ (US);
Li Huang, Tempe, AZ (US);
SOITEC, Crolles, FR;
Abstract
Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InGaN, and at least one barrier layer comprising InGaN proximate the at least one well layer. In some embodiments, the value of w in the InGaN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InGaN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.