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For the Inventor, By the Inventor

Mesa, AZ, United States of America

Jean-Philippe Debray

USPTO Granted Patents = 6 

Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:

goldMedal6 out of 507 
 
Soitec
 patents

Years Active: 2015-2018

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6 patents (USPTO):
1. 9978905 - Semiconductor structures having active regions comprising InGaN and methods of forming such semiconductor structures (2018-05-22),
2. 9634182 - Semiconductor structures having active regions including indium gallium nitride, methods of forming such semiconductor structures, and related light emitting devices (2017-04-25),
3. 9397258 - Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures (2016-07-19),
4. 9343626 - Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures (2016-05-17),
5. 9246057 - Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures (2016-01-26),
6. 9117955 - Semiconductor structures having active regions comprising ingan, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures (2015-08-25),

Title: The Innovative Contributions of Jean-Philippe Debray

Introduction

Jean-Philippe Debray is a notable inventor based in Mesa, AZ (US), recognized for his significant contributions to the field of semiconductor technology. With a total of 6 patents to his name, Debray has made strides in developing advanced semiconductor structures that enhance the performance of light-emitting devices.

Latest Patents

Debray's latest patents focus on semiconductor structures that feature active regions comprising indium gallium nitride (InGaN). These structures include an active region situated between multiple layers of InGaN, which may be predominantly composed of this material. The designs incorporate at least one well layer and one barrier layer of InGaN, with specific values for the composition parameters. The methods outlined in his patents detail the growth of these layers to create active regions suitable for light-emitting devices, such as LEDs, which are integral to modern luminary technologies.

Career Highlights

Throughout his career, Debray has been associated with Soitec, a company renowned for its innovative semiconductor solutions. His work has contributed to advancements in the efficiency and functionality of semiconductor devices, particularly in the realm of lighting technology.

Collaborations

Debray has collaborated with several talented individuals in his field, including Chantal Arena and Heather McFavilen. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Jean-Philippe Debray's contributions to semiconductor technology exemplify the impact of innovative thinking in the development of advanced light-emitting devices. His patents and collaborations continue to influence the industry, paving the way for future advancements.

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