This inventor holds 2 USPTO granted patents. Top assignees: Foshan University, University of Electronic Science and Technology of China. Active years: 2020-2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2020-2025
Title: Innovator Spotlight: Li Hu and His Groundbreaking Patent in GaN Power Devices
Introduction: Li Hu, an accomplished inventor based in Chengdu, China, has made significant strides in the field of power electronics. With a focus on enhancing the efficiency of gate drive circuits for Gallium Nitride (GaN) power devices, Hu holds an impressive patent that showcases his expertise and innovative spirit.
Latest Patents: Li Hu's sole patent, titled "Switch bootstrap charging circuit suitable for gate drive circuit of GaN power device," introduces a novel switch bootstrap charging circuit designed specifically for gate drive applications in GaN power devices. This invention comprises a high-voltage MOSFET, a low-voltage MOSFET, and dedicated control modules for both, which generate the necessary gate drive signals. The unique configuration of the low-voltage MOSFET as a PMOS transistor, connected to the power supply voltage, significantly enhances the performance of the circuit, making it a substantial contribution to the field.
Career Highlights: Li Hu is affiliated with the University of Electronic Science and Technology of China, where he has been instrumental in advancing research in power electronics and circuit design. His work not only demonstrates his technical proficiency but also highlights his dedication to pushing the boundaries of innovative technologies in electrical engineering.
Collaborations: Hu collaborates closely with fellow researchers Xin Ming and Xuan Zhang. Their joint efforts in the research community have fostered an environment of innovation and discovery, further strengthening their contributions to the field of power devices and electronics.
Conclusion: Li Hu stands out as a noteworthy inventor with a remarkable patent that addresses key challenges in gate driving for GaN power devices. His work at the University of Electronic Science and Technology of China, along with his collaborations, emphasizes the importance of innovation in advancing technology. As he continues to break new ground in electronic circuits, the engineering community eagerly anticipates his future contributions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile