Rochester, NY, United States of America

Leonid Tsybeskov

This inventor holds 1 USPTO granted patent. Top assignee: University of Rochester. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Leonid Tsybeskov. Retrieved from https://idiyas.com/inventor/leonid-tsybeskov-1y3hgs72

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Leonid Tsybeskov: Innovator in Light-Emitting Technology

Introduction

Leonid Tsybeskov is a prominent inventor based in Rochester, NY (US). He is known for his contributions to the field of light-emitting technology, particularly through his innovative methods involving porous silicon.

Latest Patents

Tsybeskov holds a patent for a "Stabilizing process for porous silicon and resulting light emitting." This patent describes a method of producing light-emitting porous silicon light-emitting diodes. The process includes forming a porous silicon p+ layer in a p-type silicon wafer, annealing the wafer at temperatures between 800-950 degrees Celsius in an atmosphere of inert gas and 1-25% oxygen, depositing a polycrystalline silicon film on the porous silicon layer, and n+ doping a portion of the polycrystalline silicon film.

Career Highlights

Leonid Tsybeskov is affiliated with the University of Rochester, where he continues to advance research in semiconductor technology. His work has significant implications for the development of efficient light-emitting devices.

Collaborations

Some of his notable coworkers include Philippe M Fauchet and Karl D Hirschmann. Their collaborative efforts contribute to the innovative research environment at the University of Rochester.

Conclusion

Leonid Tsybeskov's work in light-emitting technology showcases his innovative spirit and dedication to advancing the field. His patent on porous silicon light-emitting diodes represents a significant step forward in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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