The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2000
Filed:
Apr. 03, 1998
Applicant:
Inventors:
Philippe M Fauchet, Pittsford, NY (US);
Leonid Tsybeskov, Rochester, NY (US);
Karl D Hirschmann, Henrietta, NY (US);
Assignee:
University of Rochester, Rochester, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438 22 ; 438505 ; 438960 ; 438962 ; 257 79 ; 257103 ;
Abstract
A method of producing light-emitting porous silicon light-emitting diode including forming a porous silicon p+ layer in a p-type silicon wafer, annealing the wafer at 800-950.degree. C. in an atmosphere of inert gas and 1-25% oxygen, depositing a polycrystalline silicon film on the porous silicon layer, and n+ doping a portion of the polycrystalline silicon film.