Karl D Hirschmann

Title: The Innovations of Karl D. Hirschmann

Introduction

Karl D. Hirschmann is an accomplished inventor based in Henrietta, NY (US). He has made significant contributions to the field of light-emitting technology, particularly through his innovative work on porous silicon.

Latest Patents

Hirschmann holds a patent for a "Stabilizing process for porous silicon and resulting light emitting." This patent describes a method of producing light-emitting porous silicon light-emitting diodes. The process includes forming a porous silicon p+ layer in a p-type silicon wafer, annealing the wafer at temperatures between 800-950 degrees Celsius in an atmosphere of inert gas and 1-25% oxygen, depositing a polycrystalline silicon film on the porous silicon layer, and n+ doping a portion of the polycrystalline silicon film. He has 1 patent to his name.

Career Highlights

Hirschmann is affiliated with the University of Rochester, where he continues to advance his research and development in the field of semiconductor technology. His work has implications for various applications, including optoelectronics and photonics.

Collaborations

Throughout his career, Hirschmann has collaborated with notable colleagues such as Philippe M. Fauchet and Leonid Tsybeskov. These partnerships have further enriched his research and contributed to the advancement of technology in his field.

Conclusion

Karl D. Hirschmann's innovative work in the development of light-emitting porous silicon technology showcases his expertise and dedication to advancing the field. His contributions are significant and continue to influence the landscape of semiconductor research.