Leonard V Interrante

Title: Leonard V Interrante: Innovator in Semiconductor Materials

Introduction

Leonard V Interrante is a notable inventor based in Schenectady, NY (US). He has made significant contributions to the field of semiconductor materials, holding a total of 5 patents. His work focuses on developing advanced materials that enhance the performance of electronic devices.

Latest Patents

One of his latest patents involves low dielectric constant films derived from sol-gel processing of a hyperbranched polycarbosilane. This innovative material features a dielectric constant of less than 2.4 and is designed for use as an interlayer dielectric film in semiconductor devices. The fabrication process utilizes an alkoxy substituted hyperbranched polycarbosilane precursor material. Another significant patent pertains to polycarbosilane compositions that serve as silicon carbide precursors. These compositions are formed through a Grignard coupling reaction of a halomethylcarbosilane, followed by reduction using a metal hydride. The resulting polycarbosilane compositions exhibit a 1:1 silicon to carbon stoichiometry and are characterized by their non-cyclic and branched structure.

Career Highlights

Throughout his career, Leonard has worked with prominent organizations such as General Electric Company and Rensselaer Polytechnic Institute. His experience in these institutions has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Leonard has collaborated with notable colleagues, including Marcus P Borom and William B Hillig. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.

Conclusion

Leonard V Interrante's contributions to semiconductor materials and his innovative patents highlight his role as a significant figure in the field. His work continues to influence the development of advanced electronic devices.