General Electric Company

Rensselaer Polytechnic Institute

Leonard V Interrante

Marcus P Borom

Raj N Singh

William B Hillig

William A Morrison

Ning Lu

Christopher K Whitmarsh

A hybrid organic/inorganic organosilicon networked polymer material having a compositional formula &lsqb;Si(O)CH &rsqb; and a dielectric constant of less than 2.4 is provided. The material may be used as an interlayer dielectric film in a semiconductor device. The film is preferably fabricated by a sol-gel process using an alkoxy substituted hyperbranched polycarbosilane precursor material.

Low dielectric constant films derived by sol-gel processing of a hyperbranched polycarbosilane

Polycarbosilane compositions, which can serve as silicon carbide precursors, are formed by a Grignard coupling reaction of a halomethylcarbosilane followed by reduction using a metal hydride. The polycarbosilane compositions that result have a substantially 1:1 silicon to carbon stoichiometry, are substantially non-cyclic and branched, and comprise the repeat units SiH.sub.3 CH.sub.2 --, --SiH.sub.3 CH.sub.2 --, .dbd.SiHCH.sub.2 --, and .tbd.SiCH.sub.2 --.

Carbosilane polymer precursors to silicon carbide ceramics

Fibrous material is coated with boron nitride and a silicon-wettable material, the coated fibrous material is admixed with an infiltration-promoting material which is at least partly elemental carbon and the mixture is formed into a preform which is infiltrated with molten silicon producing a composite containing boron nitride coated fibrous material.

Fiber-containing composite

A method is provided for applying aluminosilicate coatings onto a variety of substrates, for example, metals, metal alloys and ceramics. Certain organic solvent-soluble, organic substituted, silicon-oxygen-aluminum oligomers and method for preparing them also are provided.

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Schenectady, NY, United States of America

Leonard V Interrante