This inventor holds 1 USPTO granted patent. Top assignee: Motorola Corporation. Active years: 1998.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1998
Title: Lee Z Wang: Innovator in Non-Volatile Memory Technology
Introduction
Lee Z Wang is a notable inventor based in Austin, TX (US). He has made significant contributions to the field of non-volatile memory technology. His innovative work has led to the development of a unique method for creating and accessing split gate memory devices.
Latest Patents
Wang holds a patent for a "Method of making and accessing split gate memory device." This invention describes a non-volatile memory that features a control gate and a sidewall select gate. The sidewall select gate is formed in conjunction with a semiconductor doped oxide to create a non-volatile memory cell. The semiconductor element used for doping the oxide layer typically includes silicon or germanium. The non-volatile memory cell is programmed by storing electrons in the doped oxide and is erased using band-to-band tunneling. Wang has 1 patent to his name.
Career Highlights
Wang is currently employed at Motorola Corporation, where he continues to advance his research in memory technology. His work has been instrumental in enhancing the efficiency and functionality of memory devices.
Collaborations
Some of his notable coworkers include Wei-Ming Chen and Kuo-Tung Chang, who have collaborated with him on various projects within the field.
Conclusion
Lee Z Wang's contributions to non-volatile memory technology exemplify the innovative spirit of modern inventors. His work at Motorola Corporation and his patented methods are paving the way for advancements in memory devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile