The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1998
Filed:
Jun. 16, 1997
Applicant:
Inventors:
Wei-Ming Chen, Austin, TX (US);
Lee Z Wang, Austin, TX (US);
Kuo-Tung Chang, Austin, TX (US);
Craig Swift, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438267 ; 438304 ; 438563 ; 438596 ; 438933 ;
Abstract
A non-volatile memory having a control gate (14) and a sidewall select gate (28) is illustrated. The sidewall select gate (28) is formed in conjunction with a semiconductor doped oxide (20) to form a non-volatile memory cell (7). The semiconductor element used to dope the oxide layer (20) will generally include silicon or germanium. The non-volatile memory cell (7) is programmed by storing electrons in the doped oxide (20), and is erased using band-to-band tunneling.