Lee Yong Meng

Title: Innovations by Lee Yong Meng in Semiconductor Technology

Introduction

Lee Yong Meng is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He has developed a significant patent that enhances the fabrication of integrated circuit devices, particularly in the area of MOSFET structures.

Latest Patents

Lee Yong Meng holds a patent titled "Method to form elevated source/drain using poly spacer." This innovative method describes the formation of a sub-quarter micron MOSFET with an elevated source/drain structure. The process involves creating a gate electrode over a gate dielectric on a semiconductor substrate, followed by ion implantation to form lightly doped regions. Dielectric spacers are then formed on the sidewalls of the gate electrode. A heavily doped polysilicon layer is deposited and etched back to create polysilicon spacers. The dopant diffuses from these spacers into the substrate, forming the source and drain regions. The final step involves separating the polysilicon spacers to complete the MOSFET structure.

Career Highlights

Lee Yong Meng is currently employed at Chartered Semiconductor Manufacturing Ltd, where he applies his expertise in semiconductor fabrication. His work has significantly impacted the efficiency and performance of integrated circuits.

Collaborations

Lee has collaborated with notable colleagues such as Yang Pan and Leung Ying Keung, contributing to advancements in semiconductor technologies.

Conclusion

Lee Yong Meng's innovative methods in semiconductor technology exemplify the importance of patents in advancing electronic device fabrication. His contributions continue to influence the field and enhance the capabilities of integrated circuits.