Company Filing History:
Years Active: 2006-2012
Title: Lee J DeBruler: Innovator in High-Performance Capacitor Technologies
Introduction
Lee J DeBruler is a notable inventor based in Caldwell, ID (US). She has made significant contributions to the field of integrated MOS technologies, particularly in the fabrication of high-performance capacitors. With a total of 4 patents to her name, her work has had a substantial impact on the advancement of semiconductor technologies.
Latest Patents
DeBruler's latest patents focus on methods for fabricating high-performance capacitors that can be integrated into standard CMOS fabrication processes suitable for submicron devices. One of her key innovations involves the use of an Anti-Reflective Layer (ARL) to reduce variation in critical dimension width during the fabrication process. This ARL can be a Plasma Enhanced chemical vapor deposition Anti-Reflective Layer (PEARL) or other Anti-Reflective Coatings (ARCS), such as a conductive film like TiN. The formation of the ARL occurs after specific capacitor process steps and before the masking used for defining the lower electrodes. Additionally, her patents describe a Rapid Thermal Oxidation (RTO) process that is performed after removing unwanted capacitor dielectric layers, enhancing the overall efficiency and performance of the capacitors.
Career Highlights
Throughout her career, DeBruler has worked with prominent companies such as Ixys Ch GmbH and Zilog, Inc. Her experience in these organizations has allowed her to refine her skills and contribute to groundbreaking technologies in the semiconductor industry.
Collaborations
DeBruler has collaborated with notable professionals in her field, including Timothy K Carns and John L Horvath. These collaborations have further enriched her work and expanded the scope of her innovations.
Conclusion
Lee J DeBruler is a pioneering inventor whose work in high-performance capacitor technologies has significantly influenced the semiconductor industry. Her innovative methods and collaborations continue to drive advancements in integrated MOS technologies.
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