Leda M Lunardi

Title: Leda M Lunardi: Innovator in Semiconductor Technology

Introduction

Leda M Lunardi is a prominent inventor based in New Providence, NJ (US). She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her innovative approaches have paved the way for advancements in electronic devices.

Latest Patents

Lunardi's latest patents include a method of making a semiconductor device that comprises p-type III-V semiconductor material. This novel method involves heating a graphite body to serve as a sublimation source of carbon atoms, which are then incorporated into the III-V semiconductor material. Notably, the carbon-doped material serves as the base for a GaAs-based heterojunction bipolar transistor (HBT). Another significant patent describes a scalable and easily manufacturable HBT that features a thin emitter layer acting as an etch stop layer while passivating the extrinsic base region. This innovative design ensures that the portion of the emitter layer overlying the extrinsic base region is fully depleted at all bias voltages during normal operation. Additionally, a novel technique for carbon doping is introduced, allowing for base contact through Be implantation into the emitter layer.

Career Highlights

Lunardi has had a distinguished career, working with renowned organizations such as AT&T Bell Laboratories and American Telephone & Telegraph Company. Her work at these institutions has significantly influenced the development of semiconductor technologies.

Collaborations

Throughout her career, Lunardi has collaborated with notable colleagues, including Roger J Malik and Robert William Ryan. These partnerships have contributed to her innovative research and development efforts.

Conclusion

Leda M Lunardi's contributions to semiconductor technology exemplify her role as a leading inventor in the field. Her patents and career achievements reflect her dedication to advancing electronic device technology.