At&t Bell Laboratories

American Telephone & Telegraph Co., At&t Bell Laboratories

Leda M Lunardi

Roger J Malik

Robert William Ryan

A novel method of making a semiconductor device that comprises p-type III-V semiconductor material is disclosed. The method comprises heating of a graphite body such that the body serves as a sublimation source of carbon atoms that are incorporated into the III-V semiconductor material. Exemplarily, the carbon doped material is the base of a GaAs-based HBT.

Method of making a semiconductor device that comprises p-type III-V

A scalable and relatively easily manufacturable heterojunction bipolar transistor (HBT) comprises a thin (exemplarily 5-25 nm) emitter layer that serves as an etch stop layer and that furthermore passivates the extrinsic base region. The portion of the emitter layer that overlies the extrinsic base region is essentially fully depleted at all bias voltages in the normal operating range of the transistor. Base contact is established through the emitter layer, exemplarily by means of a metallized region on the emitter layer. A novel technique for carbon doping is also disclosed. Use of the novel technique makes possible a further embodiment of the inventive HBT, wherein base contact is made by means of Be implantation into the emitter layer.

Heterojunction bipolar transistor

A transistor is described which the base region comprises a submonolayer of essentially only dopant atoms. One embodiment is a GaAs/AlGaAs heterojunction bipolar transistor in which the base region comprises a submonolayer of Be atoms. The effective base transit time is negligible in these transistors.

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New Providence, NJ, United States of America

Leda M Lunardi