Company Filing History:
Years Active: 2004-2008
Title: The Innovations of Lawrence Foley
Introduction
Lawrence Foley is a notable inventor based in Hillsboro, OR (US). He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative spirit and technical expertise.
Latest Patents
Foley's latest patents include a "Thin passivation layer on 3D devices" and a "Method for making a semiconductor device having a high-k gate dielectric." The first patent describes a device with stacked substrates, where conducting interconnecting structures of one substrate are bonded to those of another. A passivating layer may be applied to the conducting interconnecting structures between the substrates, which can be formed using an atomic layer deposition process or a Langmuir-Blodgett technique. The second patent outlines a method for creating a semiconductor device by forming a high-k gate dielectric layer on a substrate, followed by the application of a silicon nitride layer and a gate electrode.
Career Highlights
Lawrence Foley has built a successful career at Intel Corporation, where he has been able to apply his innovative ideas to real-world applications. His work has contributed to advancements in semiconductor technology, making devices more efficient and effective.
Collaborations
Foley has collaborated with esteemed colleagues such as Robert S Chau and Timothy E Glassman, further enhancing the impact of his work in the industry.
Conclusion
Lawrence Foley's contributions to semiconductor technology through his patents and work at Intel Corporation highlight his role as a key innovator in the field. His inventions continue to influence the development of advanced electronic devices.