Intel Corporation

Lawrence Foley

Robert S Chau

Matthew V Metz

Grant M Kloster

Reza Arghavani

Timothy E Glassman

Lawrence D Wong

Douglas W Barlage

Christopher G Parker

Embodiments of the invention include a device with stacked substrates. Conducting interconnecting structures of one substrate are bonded to conducting interconnecting structures of another substrate. A passivating layer may be on the conducting interconnecting structures between the substrates and may be formed by an atomic layer deposition process or a with a Langmuir-Blodgett technique.

Thin passivation layer on 3D devices

A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate. After forming a silicon nitride layer on the high-k gate dielectric layer, a gate electrode is formed on the silicon nitride layer.

Method for making a semiconductor device having a high-k gate dielectric

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Hillsboro, OR, United States of America

Lawrence Foley